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| MP4514 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4514 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. * * * * Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25C) High collector current: IC (DC) = 3 A (max) High DC current gain: hFE = 4000 (min) (VCE = 4 V, IC = 1 A) Industrial Applications Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25C PT Tc = 25C VIsol Tj Tstg 25 1000 150 -55 to 150 V C C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating 120 100 6 3 4 0.5 3.0 5.0 W Unit V V V A A W JEDEC JEITA TOSHIBA 2-32B1B Weight: 6.0 g (typ.) Array Configuration 2 5 4 8 9 12 11 1 R1 R2 R1 4.5 k 3 R2 300 6 7 10 1 2002-11-20 MP4514 Thermal Characteristics Characteristics Thermal resistance of channel to ambient (4 devices operation, Ta = 25C) Thermal resistance of channel to case (4 devices operation, Tc = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 second) Rth (j-c) 5.0 C/W Symbol Max Unit Rth (j-a) 25 C/W TL 260 C Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time Storage time tstg IB1 20 s Test Condition VCB = 120 V, IE = 0 A VCE = 100 V, IB = 0 A VEB = 6 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 4 V, IC = 1 A VCE = 4 V, IC = 2 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 30 Min 0.5 120 100 4000 1000 Typ. 100 20 0.4 Max 10 10 2.5 15000 1.5 2.0 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 4.0 s IB2 VCC = 30 V 0.6 Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% Emitter-Collector Diode Ratings and Characteristics (Ta = 25C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 0.5 A, IB = 0 A IF = 2 A, VBE = -3 V, dIF/dt = -50 A/s Test Condition Min Typ. 1.0 5 Max 2 4 2.0 Unit A A V s C 2 2002-11-20 MP4514 IC - VCE 4 4 2 1 4 Common emitter Tc = 25C IC - VBE Common emitter VCE = 2 V (A) (A) 3 0.5 2 3 IC Collector current Collector current IC 2 0.4 0.3 0.2 Tc = 100C 1 -55 0 0 25 1 IB = 0.15 mA 0 0 0 2 4 6 8 10 1 2 3 4 5 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 10000 Common emitter 5000 V CE = 2 V 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.1 0 0.1 0.5 1 1.5 2 VCE - IB Common emitter Tc = 25C hFE Tc = 100C 25 1000 500 300 -55 DC current gain Collector-emitter voltage VCE 3000 (V) 3 IC = 4 A 100 0.03 0.1 0.3 1 3 10 Collector current IC (A) 0.3 1 3 10 30 100 300 Base current IB (mA) VCE (sat) - IC 10 10 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 3 Tc = -55C 25 1 100 IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) Common emitter 5 3 IC/IB = 500 1 Tc = -55C 25 100 0.5 0.1 0.3 0.5 1 3 5 0.5 0.1 0.3 0.5 1 3 5 Collector current IC (A) Collector current IC (A) 3 2002-11-20 MP4514 rth - tw 300 Curves should be applied in thermal limited area. (single nonrepetitive pulse) Below figure show thermal resistance per 1 unit versus pulse width. (C/W) 100 (4) rth Transient thermal resistance 30 (3) 10 (1) (2) 3 1 0.3 0.001 -No heat sink and attached on a circuit board(1) 1 device operation (2) 2 devices operation (3) 3 devices operation Circuit board (4) 4 devices operation 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 10 5 IC max (pulsed)* 3 160 Tj - PT (C) Junction temperature increase Tj (1) 120 (2) (3) (4) (A) 10 ms* 1 0.5 0.3 1 ms* 100 s* IC 80 Circuit board 40 Attached on a circuit board (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation 2 4 6 8 10 Collector current 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.01 1 3 5 10 30 VCEO max 50 100 300 0 0 Total power dissipation PT (W) Collector-emitter voltage VCE (V) PT - Ta 8 (1) 1 device operation (2) 2 devices operation (3) 3 devices operation (4) 4 devices operation Attached on a circuit board (W) PT 6 (4) (3) 4 (2) (1) 2 Total power dissipation Circuit board 0 0 40 80 120 160 200 Ambient temperature Ta (C) 4 2002-11-20 MP4514 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-11-20 |
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